By Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns
This publication offers a complete monograph on gate stacks in semiconductor know-how. It covers the key most modern advancements and fundamentals and should be priceless as a reference paintings for researchers, engineers and graduate scholars alike. The reader gets a transparent view of what has been performed up to now, what's the cutting-edge and that are the most demanding situations forward earlier than we come any towards a possible Ge and III-V MOS know-how.
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Additional resources for Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics)
The silicon surface terminated by hydrogen is chemically stable . In this section, hydrogen termination of Si(110) surface is also described. The hydrogen terminated Si(110) surface is very weakly passivated against native oxidation compared with the hydrogen terminated Si(100) surface, and as a result, precise control of the process atmosphere is essentially required for high performance devices to be fabricated on the Si(110) surface. 10−14 10−15 SId (A2/Hz) 10−16 RCA clean Radical oxidation 10−17 5 steps clean Termal oxidation 10−18 PMOS (110) L / W=1/20µm Vd=−100mV Vg-Vth=−2V 10−19 10−20 10−21 10−22 10−23 1 10 5 steps clean Radical oxidation 102 103 Frequency (Hz) 104 105 Fig.
Inoue, Int. Electron Devices Meet. Tech. , San Francisco, p. 27 (2002) Z. Krivokapih, V. Moroz, W. -R. Lin, Int. Electron Devices Meet. Tech. , p. 445 (2003) H. D. L. R. S. C. Sturm, Appl. Phys. Lett. 87, 061922 (2005) T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita, N. Sugiyama, E. Toyoda and S. Takagi, Proc. VLSI Symposium, Kyoto, p. 178 (2005) 2 High Current Drivability MOSFET Fabricated on Si(110) Surface A. Teramoto and T. Ohmi Summary. This chapter demonstrates CMOS device characteristics on the Si(110) surface by using a surface ﬂattening process and radical oxidation.
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Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics) by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns