Download PDF by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc: Advanced Gate Stacks for High-Mobility Semiconductors

By Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns

ISBN-10: 3540714901

ISBN-13: 9783540714903

This publication offers a complete monograph on gate stacks in semiconductor know-how. It covers the key most modern advancements and fundamentals and should be priceless as a reference paintings for researchers, engineers and graduate scholars alike. The reader gets a transparent view of what has been performed up to now, what's the cutting-edge and that are the most demanding situations forward earlier than we come any towards a possible Ge and III-V MOS know-how.

Show description

Read Online or Download Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics) PDF

Similar electricity books

Download e-book for iPad: Physics of Semiconductors by B. Sapoval

In response to classes given on the Ecole Polytechnique in France, this publication covers not just the elemental physics of semiconductors, but additionally discusses the operation of digital and optical units in line with semiconductors. it's geared toward scholars with an excellent heritage in arithmetic and physics, and is both suited to graduate-level classes in condensed-matter physics as for self-study by way of engineers attracted to a simple figuring out of semiconductor units.

Geometrical Charged-Particle Optics - download pdf or read online

This moment version is a longer model of the 1st version of Geometrical Charged-Particle Optics. The up to date reference monograph is meant as a advisor for researchers and graduate scholars who're looking a accomplished remedy of the layout of tools and beam-guiding structures of charged debris and their propagation in electromagnetic fields.

Get Electrodynamics: An Intensive Course PDF

This publication is dedicated to the basics of classical electrodynamics, the most appealing and effective theories in physics. A normal survey at the applicability of actual theories exhibits that merely few theories could be in comparison to electrodynamics. basically, all electrical and digital units used worldwide are in accordance with the idea of electromagnetism.

Additional resources for Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics)

Sample text

The silicon surface terminated by hydrogen is chemically stable [26]. In this section, hydrogen termination of Si(110) surface is also described. The hydrogen terminated Si(110) surface is very weakly passivated against native oxidation compared with the hydrogen terminated Si(100) surface, and as a result, precise control of the process atmosphere is essentially required for high performance devices to be fabricated on the Si(110) surface. 10−14 10−15 SId (A2/Hz) 10−16 RCA clean Radical oxidation 10−17 5 steps clean Termal oxidation 10−18 PMOS (110) L / W=1/20µm Vd=−100mV Vg-Vth=−2V 10−19 10−20 10−21 10−22 10−23 1 10 5 steps clean Radical oxidation 102 103 Frequency (Hz) 104 105 Fig.

Inoue, Int. Electron Devices Meet. Tech. , San Francisco, p. 27 (2002) Z. Krivokapih, V. Moroz, W. -R. Lin, Int. Electron Devices Meet. Tech. , p. 445 (2003) H. D. L. R. S. C. Sturm, Appl. Phys. Lett. 87, 061922 (2005) T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita, N. Sugiyama, E. Toyoda and S. Takagi, Proc. VLSI Symposium, Kyoto, p. 178 (2005) 2 High Current Drivability MOSFET Fabricated on Si(110) Surface A. Teramoto and T. Ohmi Summary. This chapter demonstrates CMOS device characteristics on the Si(110) surface by using a surface flattening process and radical oxidation.

Mocuta, S. Bedell, H. Chen, D. Sadana, K. Rim, P. O’Neil, R. Mo, K. Chan, C. Cabral, C. Lavoie, D. Mocuta, A. M. 18 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. S. Takagi Mitchell, J. Mezzapelle, F. Jamin, M. Sendelbach, H. Kermel, M. Gribelyuk, A. A. Jenkins, S. H. Ku, M. Y. Yang, E. Leobandung, P. Agnello, W. Haensch, and J. Welser, Int. Electron Devices Meet. Tech. , San Francisco, p. -S. Goo, Q. Xiang, Y. Takamura, H. Wang, J. Pan, F. Arasnia, E. N. Paton, P. V. Sidorov, E. Adem, A. Lochtefeld, G.

Download PDF sample

Advanced Gate Stacks for High-Mobility Semiconductors (Springer Series in Advanced Microelectronics) by Athanasios Dimoulas, Evgeni Gusev, Paul C. McIntyre, Marc Heyns


by Paul
4.5

Rated 4.05 of 5 – based on 39 votes